| Popis: |
It has been well known the effect of ion-bombardment is controlled by self-bias voltage around a substrate, and it is increased by high RF power and vacuum, but decreased with a substrate size. However, RF matching is unstable under high vacuum state and high RF power. Thus in this study, in order to overcome those problem and to increase the ion collision effect, we supplied various DC bias voltages(self bias, -150, -200, -250, -300, -350 Voltage) to substrate at lowRF power(100W). It was investigated by XRD, AFM, SEM, UV spectrometer and Ellipsometer that effect of DC bias voltage on the optical properties of TiO 2 single layer film deposited on p-type Si wafer(100) and glasses by RF plasma assisted electron beam evaporation(PAEBE) without substrate heating. It was measured the self bias is -110V at condition of 100W RF power, 3x10 -3 torr. The micro crack on surface was not found until -200V DC bias power, but large grain (cluster) is occurred at high bias power (-250, -300, -350V). RMS values were increased with increasing the bias power but refractive index (n-value) was decreased with one. |
