A Mobility Stress Response Model of FinFET: Silicon vs Germanium
| Autor: | Cheng-Hsien Yang, Yun-Fang Chung, Shu-Tong Chang, Kuan-Ting Chen |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Silicon business.industry Transistor chemistry.chemical_element Germanium Short-channel effect 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Fight-or-flight response chemistry law 0103 physical sciences Optoelectronics Stress conditions 0210 nano-technology business |
| Zdroj: | 2020 IEEE Silicon Nanoelectronics Workshop (SNW). |
| DOI: | 10.1109/snw50361.2020.9131611 |
| Popis: | FinFET, which could be applied to sub 22 nm technology nodes, is the novel 3D transistor device structure to effectively inhibit short channel effect for the continuous microminiaturization of transistor components. This study focuses on the comparison of silicon and germanium, as the channel material, to FinFET for calculating carrier distribution and carrier mobility on inversion layer as well as the stress response. A mobility stress response model (piezomobility model) which could rapidly and accurately predict carrier mobility changes under different stress conditions is also investigated. |
| Databáze: | OpenAIRE |
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