A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare
| Autor: | Maria Luz Gil-Heras, Antonio Bodalo-Marquez, Eduardo Oreia-Gigorro, Virginia Bueno-Fernandez, Emilio Delgado Pascual, Jesus Grajal, Juan Jose Sanchez-Martinez |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Maximum power principle business.industry Amplifier 020208 electrical & electronic engineering Transistor 020206 networking & telecommunications Gallium nitride 02 engineering and technology law.invention chemistry.chemical_compound Electricity generation chemistry law 0202 electrical engineering electronic engineering information engineering Optoelectronics Electronic warfare business Saturation (magnetic) Monolithic microwave integrated circuit |
| Zdroj: | 2018 13th European Microwave Integrated Circuits Conference (EuMIC). |
| Popis: | A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $\mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation. |
| Databáze: | OpenAIRE |
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