Autor:	T. Sasaki, A. Fukushima, S. Kurita, N.S. Takahashi
Rok vydání:	1983
Předmět:	Materials science business.industry Crystal growth Substrate (electronics) Double heterostructure Epitaxy Gallium arsenide chemistry.chemical_compound chemistry Electronic engineering Optoelectronics Wafer Electrical and Electronic Engineering Thin film business Layer (electronics)
Zdroj:	Electronics Letters. 19:402
ISSN:	0013-5194
DOI:	10.1049/el:19830276
Popis:	An InP/InGaAs/InP double heterostructure wafer is grown directly on a (100) InP substrate using very low temperature LPE growth. This crystal exhibits a thin transition layer at a InP-InGaAs interface because of dissolution of the ternary layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb665d16ef8f8d2e55c085b32abb1881 https://doi.org/10.1049/el:19830276 Zobrazit plný text záznamu