Autor: Anna M. Brosa, Joan Figueras
Rok vydání: 1999
Předmět:
Zdroj: Journal of Electronic Testing. 14:23-31
ISSN: 0923-8174
DOI: 10.1023/a:1008388903741
Popis: A unified approach to tackle the characterization of the floating gate defect in analog and mixed-signal circuits is introduced. An electrical level model of the defective circuit is proposed extending previous models used effectively in the digital domain. The poly-bulk, poly-well, poly-power rail and metal-poly capacitances are significant parameters in determining the behavior of the floating gate transistor. The model is used to analyze the feasibility of testing a simple analog cell with the floating gate defects through the observation of the quiescent current consumption and the dynamic behavior.
Databáze: OpenAIRE