| Popis: |
Self-Aligned-Double-Patterning (SADP) is a potential technology for metal layers in N10 and beyond nodes. SADP manufacturing process comes with lots of challenges. Several approaches were introduced to manufacture SADP. The most major SADP manufacturing approach is the Spacer-Is-Dielectric (SID). One of the main advantages of SADP over Litho-Etch-Litho-Etch (LELE) Double Patterning (DP) is better Mask Overlay Control. In addition, SADP results in better process tolerance and lower Line-Width Roughness. In this paper, we propose a model-based manufacturing flow for SID-SADP approach. The flow includes: (1) SADP Patterns Decomposition, (2) Etch Retargeting, (3) Sub Resolution Assist Features (SRAF) Insertion, (4) Optical Proximity Correction (OPC) process, and finally (5) Verification. The motivation beyond developing this flow is to find the least number of needed masks to achieve satisfactory imaging quality, and to characterize possible challenges in each step of the flow. Consequently, we highlight the challenges and the proposed techniques we examined to meet this objective. |
