Optical lamp recrystallization of plasma-sprayed silicon deposits on different substrates
| Autor: | R. Suryanarayanan, Siva Sivoththaman, M. Rodot, A. Eyer |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Zone melting
Materials science Silicon Mechanical Engineering Analytical chemistry chemistry.chemical_element Mineralogy Recrystallization (metallurgy) engineering.material Condensed Matter Physics Grain size Polycrystalline silicon chemistry Mechanics of Materials visual_art visual_art.visual_art_medium engineering General Materials Science Crystallite Ceramic Single crystal |
| Zdroj: | Materials Research Bulletin. 27:425-430 |
| ISSN: | 0025-5408 |
| Popis: | Fine-grained polycrystalline silicon (Si) was deposited using a plasma torch onto different substrates such as single crystal Si, polycrystalline Si, and ceramic alumina (Al 2 O 3 ). These deposits were then recrystallized by zone-melting using optical (tungsten-halogen) lamps. The grain morphology of the deposits on Si were greatly improved, reaching that of the substrate. Those deposited on Al 2 O 3 substrates were self-supporting and their grain size largely improved after recrystallization. Here we report the improvement in bulk and surface properties after zone-melting. The hole mobility, resistivity, and minority carrier diffusion length of the zone-melted samples were 225 cm 2 /V-s, 0.3 ohm-cm, and 25 microns respectively. Notes on process-introduced impurities are also given. |
| Databáze: | OpenAIRE |
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