Depletion-Mode β-Ga2O3 MOSFETs Grown by Nonvacuum, Cost-Effective Mist-CVD Method on Fe-Doped GaN Substrates

Autor:	Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Zhaoqing Feng, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:1196-1199
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3143472
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb3c9eaa5b7b684f16186f15ec4190e0 https://doi.org/10.1109/ted.2022.3143472 Zobrazit plný text záznamu