Universal closed-form expression based on magnetic flux density for the inductance of Tapered Through-Silicon Vias (T-TSVs)
| Autor: | Gang Dong, Yintang Yang, Weijun Zhu, Jingrui Chai, Junping Zheng, Zheng Mei |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Physics Field (physics) Silicon Mathematical analysis Equivalent series inductance General Engineering chemistry.chemical_element 020206 networking & telecommunications 02 engineering and technology Solver 01 natural sciences Magnetic field Inductance chemistry 0103 physical sciences Parasitic element 0202 electrical engineering electronic engineering information engineering Electronic engineering Closed-form expression |
| Zdroj: | Microelectronics Journal. 63:20-26 |
| ISSN: | 0026-2692 |
| DOI: | 10.1016/j.mejo.2017.02.015 |
| Popis: | In this paper, a universal closed-form expression for the parasitic inductance of tapered through-silicon vias (T-TSVs) with a frequency of up to 20GHz is proposed. The expression, which considers skin and proximity effects, can be used to calculate the self-partial inductance and mutual-partial inductance, considering TSVs located in adjacent layers or in the same layer. When the slope angle is 90, the obtained formulas can be reduced to the formulas of cylindrical TSVs. The comparison between the results of the proposed formulas and the results of the three-dimensional quasi-static field solver (Q3D) demonstrates that the proposed formulas are extremely accurate, with a maximum error of 2%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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