Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

Autor:	Hugo Bender, Roger Loo, J.P. Lu, Andriy Hikavyy, B. Vissouvanadin, Vladimir Machkaoutsan, Mohammad Kamruzzaman Chowdhury, Peter Verheyen, Pierre Tomasini, Cor Claeys, S.G Thomas, Eddy Simoen, R. Wise, J.W. Weijtmans, Mireia Bargallo Gonzalez
Rok vydání:	2008
Předmět:	Materials science business.industry Relaxation (NMR) Doping Epitaxy Electronic Optical and Magnetic Materials Strain engineering Ion implantation Electronic engineering Stress relaxation Optoelectronics Electrical and Electronic Engineering p–n junction business Deposition (law)
Zdroj:	IEEE Transactions on Electron Devices. 55:925-930
ISSN:	0018-9383
DOI:	10.1109/ted.2007.914843
Popis:	This paper studies the leakage current components in embedded Si1-x,Gex, source/drain (S/D) p+-n junctions, with different Ge contents, varying between 20% and 35%. In addition, the impact of performing a highly doped drain (HDD) implantation before or after the selective epitaxial deposition of in situ highly B-doped S/D layers is investigated. It is shown that the lowest junction leakage is obtained for the post-epi HDD condition, and moreover, for the smallest active area size. As pointed out, this dependence is related with a window-size-dependent strain relaxation, induced by the ion-implantation-related defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb2850a9a8ebe1bcb28e47173969a343 https://doi.org/10.1109/ted.2007.914843 Zobrazit plný text záznamu