Autor: Gianni Taraschi, Matthew T. Currie, Christopher W. Leitz, Arthur J. Pitera, Z. Y. Cheng, Michael E. Groenert, Eugene A. Fitzgerald, Vicky K. Yang
Rok vydání: 2002
Předmět:
Zdroj: Journal of Materials Science: Materials in Electronics. 13:377-380
ISSN: 0957-4522
DOI: 10.1023/a:1016006824115
Popis: Working optical links epitaxially grown by atmospheric MOCVD and fabricated on Si via SiGe virtual substrates are demonstrated for the first time. The SiGe virtual substrates are graded from Si substrates to 100% Ge. Because of the 0.07% lattice mismatch between GaAs and Ge, high-quality GaAs-based thin films with threading dislocation densities
Databáze: OpenAIRE