Pd/ZnO Nanoparticles Based Schottky Ultraviolet Photodiodes Grown on Sn-Coated n-Si Substrates by Thermal Evaporation Method

Autor:	Divya Somvanshi, Satyabrata Jit
Rok vydání:	2014
Předmět:	Photocurrent Materials science business.industry Schottky diode Biasing medicine.disease_cause Atomic and Molecular Physics and Optics Photodiode law.invention Responsivity law medicine Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Ultraviolet Dark current
Zdroj:	IEEE Journal of Selected Topics in Quantum Electronics. 20:120-125
ISSN:	1558-4542 1077-260X
Popis:	This paper reports the ultraviolet (UV) detection characteristics of Pd/ZnO nanoparticles (NPs) based Schottky diodes grown on Sn coated n-Si substrates by thermal evaporation method. The measured current-voltage characteristics of the Pd/ZnO NPs/Sn/n-Si diodes under both the dark and UV illumination at wavelength of 365 nm have been presented for the applied bias voltage varying from -3 to 3 V. The as-fabricated photodiodes show a high-contrast ratio (i.e., the photocurrent to dark current ratio) of ~541.34, an excellent quantum efficiency of ~68%, a reasonably good responsivity of ~0.20 A/W at 365 nm, and -3 V reverse bias voltage at room temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bb10fb2f6e578891cec30c08c56d66f1 https://doi.org/10.1109/jstqe.2014.2328234 Zobrazit plný text záznamu