(Photo)electrochemical characterization of tin‐doped indium oxide

Autor:	J. E. A. M. van den Meerakker, E. A. Meulenkamp, Monica Scholten
Rok vydání:	1993
Předmět:	Electron excitation Chemistry Band gap Photoconductivity Doping Analytical chemistry General Physics and Astronomy chemistry.chemical_element Charge carrier Thin film Sputter deposition Indium
Zdroj:	Journal of Applied Physics. 74:3282-3288
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.354549
Popis:	Tin‐doped indium oxide (ITO) films, prepared by dc magnetron sputtering, were characterized by (photo)electrochemical measurements in aqueous H2SO4 solutions. Wavelength dependent photocurrent measurements were used to determine the optical band gap energy of these films. Electron excitation from the valence band to localized states in the band gap was observed. The presence of such energy levels resulted in an Urbach tail. Impedance measurements were used to determine the flatband potential and the charge carrier concentration of ITO. A change in the charge carrier concentration due to different deposition conditions resulted in a change of the resistivity and in a shift of the flatband potential. This shift could be explained by a Moss–Burstein shift of the optical band gap.
Databáze:	OpenAIRE
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