| Autor: |
null Ustinov V. M., null Egorov А. Yu., null Voropaev K. O., null Denisov D. V., null Gladyshev A. G., null Karachinsky L. Ya., null Novikov I. I., null Babichev A. V., null Rochas S. S., null Vasyl’ev A. P., null Kuzmenkov A.G., null Maleev N.A., null Blokhin A.A., null Bobrov M. A., null Blokhin S.A. |
| Rok vydání: |
2022 |
| Zdroj: |
Technical Physics Letters. 48:3 |
| ISSN: |
1726-7471 |
| DOI: |
10.21883/tpl.2022.15.53808.18938 |
| Popis: |
The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n+-InGaAs/p+-InGaAs/p+-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20oC and 90oC, respectively. Keywords: vertical-cavity surface-emitting laser, wafer fusion, tunnel junction, superlattice, internal optical loss. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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