Ultrathin GaAs Solar Cells with Rough GaP Light-Trapping Structure and Epitaxial Lift-Off
| Autor: | Van Der Woude, D., Bauhuis, G., Van Der Krabben, L., Daemen, T., Kim, J.J., Mulder, P., Smits, J., Vlieg, E., Schermer, J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| DOI: | 10.4229/wcpec-82022-2av.3.52 |
| Popis: | 8th World Conference on Photovoltaic Energy Conversion; 399-401 In this work, ultrathin GaAs solar cells are presented with a rough backscattering structure based on lattice mismatched gallium phosphide, grown with MOCVD. This way, a simple and reproducible light-trapping scheme is introduced with low parasitic absorption and full compatibility with hydrofluoric acid-based epitaxial lift-off. Solar cells with two different GaP surface morphologies are demonstrated and shown to be compatible with epitaxial lift-off without any complications or performance loss. An increase in short-circuit current density of up to 9% is observed, a direct result of the increased photon absorption induced by the scattering of the rough GaP texture. |
| Databáze: | OpenAIRE |
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