Competitiveness of negative tone resists for nanoimprint lithography
| Autor: | Christian Steinberg, Andre Mayer, Hella-Christin Scheer, Khalid Dhima, Si Wang, Marc Papenheim |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Thin layers
Materials science business.industry Context (language use) Photoresist Condensed Matter Physics Residual Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nanoimprint lithography law.invention Optics Resist law Electrical and Electronic Engineering Absorption (electromagnetic radiation) business Intensity (heat transfer) |
| Zdroj: | Microelectronic Engineering. 123:43-47 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2014.05.017 |
| Popis: | Graphical abstractDisplay Omitted A semi-analytical approach in a matrix form to handle the intensity distribution within photoresist layers.Thermal nanoimprint with well-defined residual layer (dR≤30nm) and without physical self-assembly defects.Residual layer removal by development. This paper presents a semi-analytical approach for the calculation of the mean relative intensity within photoresist layers of a given thickness on silicon - the mean intensity is the one obtained after a post exposure bake to remove standing wave effects. The approach is based on the handling of analytically determined intensity values in a matrix form. Transmission, reflection and absorption in an air/resist/substrate configuration are considered to calculate the intensity for a single wavelength or a multiple wavelength exposure. Swing curves of the mean relative intensity as a function of the total resist thickness indicate a novel application in the context of nanoimprint: a residual layer-free imprint can be obtained with residual layers of up to about 30nm, as such thin layers always remain underexposed. Thus, when a negative tone photoresist is imprinted and is flood exposed after the imprint, any thin residual layer will be removable in a simple development step, thus avoiding any breakthrough etch. This is of particular interest for a further use of the imprinted structures with lift-off. |
| Databáze: | OpenAIRE |
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