Polarization-independent strained InGaAs/InGaAlAs quantum-well phase modulators
| Autor: | T. Y. Chang, Young-Kai Chen, N.J. Sauer, J.E. Zucker |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
business.industry Phase (waves) Polarization (waves) Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Electric field Optoelectronics Electrical and Electronic Engineering business Phase modulation Waveguide Refractive index Quantum well |
| Zdroj: | IEEE Photonics Technology Letters. 4:1120-1123 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown that by increasing the Ga fraction and hence the tensile strain in the quantum well the electric-field-induced refractive index change in the TM polarization Delta n/sub TM/ can be made to approach that in the TE polarization Delta n/sub TE/. At 1.523 mu m, the ratio Delta n/sub TM// Delta n/sub TE/=1 for x=0.7 with a phase shift coefficient of 17.4 degrees /V-mm was achieved. Polarization independence was maintained over the entire range of reverse bias voltage. > |
| Databáze: | OpenAIRE |
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