New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane
| Autor: | Jong-Moo Huh, Jae-Hong Jeon, Sang-Geun Park, Kyuha Chung, Joon-Chul Goh, Joon-hoo Choi, Jae-Hoon Lee, Min-Koo Han |
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| Rok vydání: | 2007 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) business.industry Annealing (metallurgy) Transistor General Engineering General Physics and Astronomy Biasing Oxide thin-film transistor Active matrix law.invention chemistry.chemical_compound chemistry Thin-film transistor law OLED Optoelectronics business |
| Zdroj: | Japanese Journal of Applied Physics. 46:1350-1353 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.46.1350 |
| Popis: | We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 µA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress Vth shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing. |
| Databáze: | OpenAIRE |
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