| Autor: |
Zahangir Alom, Vasilios Palekis, Sheikh Tawsif Elahi, Wei Wang, Chris Ferekides |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). |
| DOI: |
10.1109/pvsc43889.2021.9518791 |
| Popis: |
Improving the open circuit voltage (V OC ) has always been a critical need and focus in the research of CdTe solar cells. High n-type doping in CdTe is easier to achieve compare to p-type doping. In this paper, numerical simulations are used to investigate the factors that impact V OC in n-CdTe/p-ZnTe heterojunction solar cells. The impact of the properties of the n-CdTe absorber layer, p-ZnTe window layer and n-CdTe/p-ZnTe heterojunction interface have been studied. Simulation results from SCAPS-1D and AMPS-1D have been utilized to demonstrate the impact of n-type doping concentration, minority carrier lifetime and absorber/emitter interface defect density on device performance and are presented in this manuscript. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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