Process control system for improved run-to-run control of molecular-beam epitaxial growth of GaAs/AlxGa1−xAs heterostructures

Autor: A. Robertson, H. A. Lord, J. Moore, A. Leiberich, V. Anyanwu, J. Levkoff
Rok vydání: 1993
Předmět:
Zdroj: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:1027
ISSN: 0734-211X
DOI: 10.1116/1.586862
Popis: A system was developed that significantly improves the accuracy of molecular‐beam epitaxial flux calibration and provides ±1.0% run‐to‐run control of film thickness as demonstrated by double‐crystal x‐ray diffraction analysis of 980 nm GaAs/AlAs Bragg reflector stacks. The system combines PC‐based data acquisition and analysis of reflection high‐energy electron diffraction (RHEED) wave forms and beam flux gauge signals with mechanical improvements in RHEED sample preparation and mounting. In developing this system, an extensive series of experiments were performed to determine the sources and magnitudes of error in RHEED flux measurements. Proper flux transient corrections, precisely centered 1 mm×1 mm RHEED slices, and improved signal processing and analysis of RHEED wave forms were found to significantly enhance run‐to‐run flux control.
Databáze: OpenAIRE