Effect of thermal annealing treatments on the optical activation of Tb3+ -doped amorphous SiC:H thin films
| Autor: | L Montañez, F. De Zela, J. A. Guerra, Albrecht Winnacker, K. Tucto, Roland Weingärtner, J A Töfflinger |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Acoustics and Ultrasonics Annealing (metallurgy) Doping Analytical chemistry 02 engineering and technology Rate equation 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Emission intensity Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Condensed Matter::Materials Science 0103 physical sciences Light emission Thin film 0210 nano-technology Luminescence |
| Zdroj: | Journal of Physics D: Applied Physics. 49:375104 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/49/37/375104 |
| Popis: | The effect of the annealing temperature on the light emission intensity of Tb-doped a-SiC:H thin films was investigated for different Tb concentrations under sub-bandgap photon excitation. We present a detailed discussion of rare-earth thermal activation in order to determine the optimal Tb concentration and annealing temperature for the highest Tb-related light emission intensity. Two independent processes that enhance the emission intensity are identified and incorporated in a rate equation. These are the thermally-induced increase of luminescence centers and the inhibition of host-mediated non-radiative recombinations. Finally, the presented analysis revealed a suppression of the self-quenching effect when increasing the annealing temperature. |
| Databáze: | OpenAIRE |
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