Terahertz detector with series connection of asymmetric gated transistors

Autor: V. E. Zemlyakov, K. M. Maremyanin, V. I. Gavrilenko, D. M. Yermolaev, S. Yu. Shapoval, Vyacheslav V. Popov, N. A. Maleev
Rok vydání: 2014
Předmět:
Zdroj: Journal of Physics: Conference Series. 486:012016
ISSN: 1742-6596
DOI: 10.1088/1742-6596/486/1/012016
Popis: Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.
Databáze: OpenAIRE