Thermal oxidation of GaP
| Autor: | Kent M. Geib, Carl W. Wilmsen, R. G. Gann, P. R. Brusenback, Yoshimine Kato |
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| Rok vydání: | 1984 |
| Předmět: |
Thermal oxidation
Materials science Thermal resistance Oxide Mineralogy chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Atmospheric temperature range urologic and male genital diseases Condensed Matter Physics Microstructure Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry Thermal stability Composite material |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:588-592 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.572451 |
| Popis: | The surface topography and interface structure after thermal oxidation of GaP is reported for the temperature range 600 to 1220 °C. An extensive network of interfacial voids was observed in the substrate under the oxide film. The size of the voids was enlarged by a bulging of the oxide, probably as a result of pressure within the voids but also from a difference in the coefficients of expansion which also caused cracks in the oxide film. The voids begin as isolated cavities but coalesce into winding caverns after further oxidation or with increased temperature. The oxide begins to grow a significant thickness of oxide at approximately 650 °C in dry oxygen. In steam the oxidation rate is approximately ten times faster and there are no interfacial voids even after 2 μ of oxide growth. |
| Databáze: | OpenAIRE |
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