Passivation of defects in ZnO nanowires by SiO2 sputtering deposition

Autor:	C.I. L. Sombrio, Daniel L. Baptista, R. dos Reis, Paulo L. Franzen, Henri Ivanov Boudinov
Rok vydání:	2014
Předmět:	Photoluminescence Materials science Passivation Annealing (metallurgy) Mechanical Engineering Inorganic chemistry Nanowire Sputter deposition Condensed Matter Physics Crystallographic defect Chemical engineering Mechanics of Materials Sapphire General Materials Science Vapor–liquid–solid method
Zdroj:	Materials Letters. 134:126-129
ISSN:	0167-577X
DOI:	10.1016/j.matlet.2014.07.066
Popis:	Passivation of native point defects in ZnO nanowires was successfully achieved by SiO2 deposition. The ZnO nanowires were grown on sapphire by the vapor–liquid–solid method and coated with SiO2 through reactive sputtering deposition. The samples were post-annealed at different temperatures in Argon atmosphere. Photoluminescence measurements at room temperature and electron transmission microscopy were performed. The coated nanowires present a core–shell structure. A strong oxygen vacancies passivation were observed resulting in a drastic suppression on visible light emissions in favor of UV ones. On the other hand, annealing at increasingly higher temperatures favored the oxygen desorption and the increase of deep-level states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bab4a24a48bf7e540bfb8b10815f9f77 https://doi.org/10.1016/j.matlet.2014.07.066 Zobrazit plný text záznamu Full Text from ScienceDirect