The Role of Hydrogen Atoms (H Atoms) in Metastable Defect Formation at Si–SiO2 Interfaces and in Hydrogenated Amorphous Si (a-Si:H)
| Autor: | H. Yang, Gerald Lucovsky, Z. Jing, J. L. Whitten |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Amorphous silicon
Materials science Hydrogen chemistry.chemical_element Trapping Condensed Matter Physics Quantum chemistry Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound chemistry Chemical physics Metastability Field-effect transistor Physics::Atomic Physics Atomic physics Defect reaction |
| Zdroj: | physica status solidi (a). 159:5-15 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/1521-396x(199701)159:1<5::aid-pssa5>3.0.co;2-l |
| Popis: | Mechanisms for defect metastability with H atom participation (i) at Si–SiO2 interfaces in field effect transistors (FETs) and (ii) in hydrogenated amorphous silicon (a-Si:H) based solar cells are presented. Intrinsic metastability reaction pathways are shown to be associated with inherent differences in defect bonding properties between charged (i) Si atoms and (ii) H, O and N atoms. Defect reaction equations, supported by quantum chemistry calculations, are presented. Metastable defects emphasized in this paper are created by hole trapping followed by H attachment. |
| Databáze: | OpenAIRE |
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