Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology
| Autor: | Andreas D. Stricker, Peter Andrew Smith, Jae-Sung Rieh, John E. Florkey, S.-J. Jeng, H. Chen, Marwan H. Khater, Gregory G. Freeman, J. Johnson, Kathryn T. Schonenberg, David C. Ahlgren, E. Mengistu, Basanth Jagannathan, S. Subbanna, C.M. Schnabel, David R. Greenberg, F. Golan, Kenneth J. Stein, Francois Pagette, R.A. Groves, David Angell |
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| Rok vydání: | 2002 |
| Předmět: |
Physics
business.industry Bipolar junction transistor Transistor Capacitance Cutoff frequency Electronic Optical and Magnetic Materials Silicon-germanium law.invention chemistry.chemical_compound chemistry Parasitic capacitance law Parasitic element Optoelectronics Breakdown voltage Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 23:258-260 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz. f/sub MAX/ extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12/spl times/2.5 /spl mu/m/sup 2/ have these characteristics at a linear current of 1.0 mA//spl mu/m (8.3 mA//spl mu/m/sup 2/). Smaller transistors (0.12/spl times/0.5 /spl mu/m/sup 2/) have an f/sub T/ of 180 GHz at 800 /spl mu/A current. The devices have a pinched base sheet resistance of 2.5 k/spl Omega//sq. and an open-base breakdown voltage BV/sub CEO/ of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f/sub T/ at small lateral dimensions. |
| Databáze: | OpenAIRE |
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