| Autor: |
Geoffrey Choh-Fei Yeap, Effiong Ibok, Miryeong Song, Khaled Ahmed, Ming-Ren Lin, Qi Xiang, David Bang |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
56th Annual Device Research Conference Digest (Cat. No.98TH8373). |
| DOI: |
10.1109/drc.1998.731099 |
| Popis: |
Performance and reliability of sub-100 nm gate length devices using a dual gate and shallow trench isolated CMOS technology were investigated. Ultra-thin direct tunneling (DT) thermal, nitrous and nitric oxides as thin as 1.3 nm are used. Only N-MOS device results are reported here. The ultra thin LPT gate oxides are produced by a furnace oxidation with a dilute oxygen flow. Nitrous and nitric oxides are formed respectively by N/sub 2/O and NO treatments. The sub-100 nm gate length is realized by a resist trimming technique combined with deep ultraviolet lithography. For the 90 nm gate length (CD SEM) MOSFET with 2.2 nm physical thickness (TEM) of nitrous oxide on the source/drain (S/D) area produced here, the poly profile is almost vertical and the poly gate etch has high selectivity to avoid S/D gate oxide pitting, even with oxide thickness down to 1.3 nm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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