Fabrication and photoluminescence performance of porous gallium nitride luminescent materials using different 1-ethyl-3-methylimidazolium-based ionic liquids
| Autor: | Jing-Hui Yan, Zu-Gang Wang, Miao-Rong Zhang, Qing-Mei Jiang, Fei Hou, Ge-Bo Pan |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Photoluminescence Fabrication business.industry Mechanical Engineering Gallium nitride 02 engineering and technology Substrate (electronics) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences chemistry.chemical_compound chemistry Mechanics of Materials Etching (microfabrication) Ionic liquid Optoelectronics General Materials Science 0210 nano-technology Porosity business Luminescence |
| Zdroj: | Materials Letters. 223:194-197 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2018.04.007 |
| Popis: | Porous gallium nitride (GaN) luminescent materials were fabricated by photoelectrochemical etching using three different 1-ethyl-3-methylimidazolium ([EMIM])-based ionic liquids as the etchants. The as-etched porous GaN presents honeycomb shape, deep gully with some holes in the surroundings, and overlapping hole structure, which are significantly different from the planar GaN. Moreover, photoluminescence (PL) spectra indicates that the porous GaN has more excellent PL performance than the planar GaN. In general, reducing the etching time to 1 min, the PL intensity of porous GaN etched by [EMIM][OTF] is 9.27 times than that of the planar one. These results suggest that porous GaN etched by ionic liquid can be an outstanding substrate in the field of the luminescent material. |
| Databáze: | OpenAIRE |
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