Photoelectric properties of heterostructures based on InAsSbx solid solutions (0.3 ˂x ˂0.35)

Autor:	R. E. Kunkov, A. A. Klimov, N M Lebedeva, M. A. Remennyy, T. C. Lukhmyrina, B. A. Matveev
Rok vydání:	2020
Předmět:	History Materials science business.industry Optoelectronics Heterojunction Photoelectric effect business Computer Science Applications Education Solid solution
Zdroj:	Journal of Physics: Conference Series. 1695:012077
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1695/1/012077
Popis:	The results of a study of multilayer p-n heterostructures based on InAsSbx solid solution (0.3 ˂ x ˂0.35), with a long-wavelength photosensitivity boundary of λ0.1 ≈ 9.5 μm at room temperature are presented. The current-voltage and spectral characteristics of photosensitivity and electroluminescence were analyzed in the temperature range 80 ÷ 300 K. It is shown that the photoelectric properties are determined by the diffusion mechanism of current flow, and experimental samples of photodetectors are characterized by a quantum efficiency of Si ⩾ 1 A / W.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ba8fb7ddba30456b87d799f9cbe15522 https://doi.org/10.1088/1742-6596/1695/1/012077 Zobrazit plný text záznamu