Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors
| Autor: | Dong-Won Kim, Sungwoo Hwang, Duck Kyoon Ahn, M H Son, ByoungHak Hong, Y. Y. Lee, Donggun Park, Young Chai Jung, Kyoung-hwan Yeo, Luryi Choi, Sang-Hun Song, Keun Hwi Cho, Gyo Young Jin |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon business.industry Scattering Nanowire Electrical engineering chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Noise (electronics) Computer Science Applications PMOS logic chemistry MOSFET Surface roughness Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nanotechnology. 9:754-758 |
| ISSN: | 1941-0085 1536-125X |
| Popis: | We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs. |
| Databáze: | OpenAIRE |
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