300mm Cu BEOL Top Trench Etch Process Development for 65nm Logic Technology
| Autor: | Ganming Zhao, Jeff Song, Andrew Liu, Wei Ren, Ying Huang, Judy Wang, Peter Hsieh, Binxi Gu |
|---|---|
| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | ECS Transactions. 27:749-752 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3360705 |
| Popis: | The challenges for the top trench etch of small size technology node logic products, include how to get minimal etch depth loading and superior CD (critical dimension) uniformity, free faceting or fencing and free striations. Enabler dielectric etch chamber is designed to provide excellent etch performance and productivity for 65nm technology and beyond. Enabler chamber is equipped with an NSTU (neutral species tuning unit), a CSTU (charged species tuning unit), and 2 MHz and 13.56MHz dual frequency bias power, as well as 162MHz high frequency source power, which is used to re-shape the plasma density distribution. In this work, a 5-step in-situ process (including two ashing steps) was developed using an Enabler chamber. Overall, mass production demonstrated excellent inline and electrical performance with high reliability and MTBC of as high as 460 RF hours was achieved. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|