High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography
| Autor: | F. Gaboriau, G. Grützner, A. Barreau, G. Turban, G. Bleidieβel, K. Pfeiffer, Ch. Cardinaud, M. C. Peignon |
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| Rok vydání: | 2000 |
| Předmět: |
Plasma etching
Chemistry technology industry and agriculture Analytical chemistry Nanotechnology Condensed Matter Physics Isotropic etching Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Resist law Nano Dry etching Electrical and Electronic Engineering Photolithography Reactive-ion etching Lithography |
| Zdroj: | Microelectronic Engineering. 53:501-505 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00365-8 |
| Popis: | In this work, we studied etching of resists suitable for nano-imprint lithography. First, various resists have been tested in a SiO"2 process under low pressure and high plasma density conditions in order to get the best SiO"2/resist selectivity. Second, to understand resist etching mechanism and thus optimize the process, we focused our study on polymer etching behavior in different plasma conditions. Finally, transfer of imprinted features in SiO"2 has been successfully achieved. |
| Databáze: | OpenAIRE |
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