| Autor: |
E M Krasavina, V. P. Tsyganov, S. P. Prokofeva, I V Kryukova, E V Matveenko, L V Druzhinina, L M Dolginov, E G Shevchenko, Yu V Petrushenko |
| Rok vydání: |
1976 |
| Předmět: |
|
| Zdroj: |
Soviet Journal of Quantum Electronics. 6:1367-1369 |
| ISSN: |
0049-1748 |
| DOI: |
10.1070/qe1976v006n11abeh012517 |
| Popis: |
Epitaxial films of GaxIn1–xAs, GaAsxSb1–x, and GaxIn1–xAs1–yPy were excited with 50 keV electrons and the characteristics of photoluminescence and coherent radiation emitted from these films were determined at temperatures of 80 and 300°K. A study was made of the dependence of the luminescence intensity and laser parameters on the technology used in the preparation of these solid-solution films and on their composition and type of conduction. It was concluded that these materials could be used as efficient semiconductor lasers emitting up to 150 W power at wavelengths of 1–1.15 μ from an excited region of 0.5×0.5 mm size. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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