Separation of III-N partially-coalesced nanowire arrays from Si substrate

Autor:	V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, K Yu Shubina, T N Berezovskaya, E V Nikitina, I P Soshnikov, G E Cirlin
Rok vydání:	2021
Předmět:	History Computer Science Applications Education
Zdroj:	Journal of Physics: Conference Series. 2086:012191
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/2086/1/012191
Popis:	In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of separation super-dense arrays or arrays of partially-coalesced InGaN nanowires and single nanowires from a Si substrate by chemical etching in HF:HNO3 solution, which allows preserving the optical properties of the structure for further use.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ba5c645313a891de98bc7f115127ade6 https://doi.org/10.1088/1742-6596/2086/1/012191 Zobrazit plný text záznamu