An Integrated High-Capacitance Varicap Based on Porous Silicon
| Autor: | Sergey P. Timoshenkov, R. M. Kalmykov, D. S. Gaev, Anton Boyko |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry High capacitance 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention Capacitor law Microsystem 0103 physical sciences Materials Chemistry Microelectronics Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Varicap |
| Zdroj: | Russian Microelectronics. 47:465-467 |
| ISSN: | 1608-3415 1063-7397 |
| Popis: | The potential for use of porous silicon in designing varicaps with high capacitance ratios satisfying the requirements of microelectronics and microsystems engineering is considered. The technique for the fabrication of capacitor structures via the electrodeposition of copper onto porous silicon is presented. The morphological features of the obtained structures are examined and the specific capacitance of varicaps is determined. The prospects for the application of varicaps based on porous silicon in integrated electronics are outlined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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