Annealed indium oxide transparent ohmic contacts to GaAs

Autor:	R. C. Barker, Thomas J. Cunningham, Louis J. Guido, J. C. Beggy
Rok vydání:	1992
Předmět:	Materials science business.industry Annealing (metallurgy) Schottky barrier Doping General Physics and Astronomy chemistry.chemical_element Tunnel effect chemistry Electrical resistivity and conductivity Optoelectronics business Ohmic contact Quantum tunnelling Indium
Zdroj:	Journal of Applied Physics. 71:1070-1072
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.350403
Popis:	The current–voltage characteristics of annealed In2O3–GaAs devices have been investigated for the purpose of fabricating transparent ohmic contacts to GaAs. A detailed study of the reverse current for as‐deposited structures with degenerately doped n‐type In2O3 on lightly doped n‐type GaAs yields a 0.67‐V high Schottky barrier. After annealing, the barrier height is only slightly modified, but the reverse current increases dramatically. This reverse current follows a voltage dependence that is consistent with a Fowler–Nordheim tunneling mechanism, for which the electric field is enhanced around localized asperities. These data suggest that an optimized annealing schedule might be used to fabricate low‐resistance, transparent In2O3 ohmic contacts to GaAs‐based optoelectronic devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ba4cd26542e2f92c4b2127749940834e https://doi.org/10.1063/1.350403 Zobrazit plný text záznamu