A 60 GS/s 8-b DAC with > 29.5dB SINAD up to Nyquist frequency in 7nm FinFET CMOS

Autor:	Yuriy M. Greshishchev, Jerry Lam, Robert Gibbins, Cho Young Gouk, Jorge Aguirre, Wen Tingjun, Naim Ben-Hamida, Douglas McPherson, Mahdi Parvizi, Sadok Aouini, Marinette Besson
Rok vydání:	2019
Předmět:	Distortion ratio SINAD Computer science business.industry Transmitter Technology choice Digital-to-analog converter Hardware_PERFORMANCEANDRELIABILITY law.invention CMOS law Hardware_INTEGRATEDCIRCUITS Electronic engineering Nyquist frequency business Digital signal processing Hardware_LOGICDESIGN
Zdroj:	BCICTS
DOI:	10.1109/bcicts45179.2019.8972740
Popis:	CMOS FinFET is a leading technology choice for state-of-the-art DSP ASICs, where achieving a high signal to noise and distortion ratio (SINAD) in the transmitter DAC becomes one of the analog design challenges. This paper presents a 60 GS/s 8-b DAC in 7nm FinFET CMOS with SINAD close to 30 dB up to the Nyquist frequency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ba41e547ccdaa1c20f94251f1e4ccde2 https://doi.org/10.1109/bcicts45179.2019.8972740 Zobrazit plný text záznamu