Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
| Autor: | L. G. Gosset, F. Martin, Isabelle Trimaille, A. Ermolieff, O. Renault, D. Rouchon, M. N. Séméria, J.-F. Damlencourt, J.-J. Ganem, Ph. Holliger |
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| Rok vydání: | 2002 |
| Předmět: |
Auger electron spectroscopy
Chemistry Analytical chemistry Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Elastic recoil detection Secondary ion mass spectrometry Atomic layer deposition X-ray photoelectron spectroscopy Materials Chemistry Ceramics and Composites Thin film Stoichiometry |
| Zdroj: | Journal of Non-Crystalline Solids. 303:17-23 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(02)00958-4 |
| Popis: | Thin Al 2 O 3 layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO 2 and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N 2 annealed thick Al 2 O 3 layers were characterized by secondary ion mass spectrometry (SIMS), elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). We show a perturbed region (5 nm thick) at the Al 2 O 3 /Si interface by XPS and Auger electron spectrometry (AES). Post-deposition annealings induced important interface oxidation, Si atoms injection and SiO 2 /Al 2 O 3 mixture whereas the initial interface was abrupt. Silicon oxidation before Al 2 O 3 growth highly limits interfacial oxidation and improves interfacial quality. We proposed that OH groups may play a key role to explain silicon oxidation during post-deposition annealings in inert ambience with low oxygen contamination levels. |
| Databáze: | OpenAIRE |
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