Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition
| Autor: | Aivar Tarre, Aleks Aidla, Ivan Netšipailo, Peeter Ritslaid, Jaan Aarik, Jelena Asari, Väino Sammelselg, Lauri Aarik |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon Inorganic chemistry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Combustion chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition Carbon film Chemical engineering chemistry Etching (microfabrication) Materials Chemistry Deposition (phase transition) Reactive-ion etching Thin film |
| Zdroj: | Thin Solid Films. 542:219-224 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.06.079 |
| Popis: | Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of |
| Databáze: | OpenAIRE |
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