Plasma‐charging damage to gate SiO2and SiO2/Si interfaces in submicronn‐channel transistors: Latent defects and passivation/depassivation of defects by hydrogen
| Autor: | P. I. Mikulan, Osama O. Awadelkarim, Stephen J. Fonash, Y. D. Chan |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon Passivation business.industry Annealing (metallurgy) Transistor technology industry and agriculture Oxide General Physics and Astronomy chemistry.chemical_element engineering.material law.invention chemistry.chemical_compound Polycrystalline silicon chemistry law MOSFET engineering Optoelectronics business Forming gas |
| Zdroj: | Journal of Applied Physics. 79:517-525 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.360860 |
| Popis: | New experimental results are presented which provide evidence for hydrogen passivation and depassivation of plasma‐charging‐induced defects in gate oxides and at oxide/silicon interfaces. The devices used in this study were 0.5 μm n‐channel metal–oxide–semiconductor field‐effect transistors fabricated on 200 mm boron‐doped silicon substrates. The processing included Cl2/HBr‐based chemistries for the polycrystalline silicon gate definition etch, and CHF3/CF4‐based chemistries for the contact etch. Plasma‐charging defects resulting from the processing are shown to have the following properties: (i) plasma‐induced charging defects are latent (electrically inactive) directly after our processing and before postmetallization annealing (PMA); (ii) these defects continue to be latent after N2 and Ar anneals done at temperatures T in the range 200 °C≤T≤400 °C; (iii) these defects are also latent after our standard PMA done in forming gas at 400 °C; (iv) these defects are electrically activated by room‐temperature... |
| Databáze: | OpenAIRE |
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