Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance
| Autor: | Weimin Gao, Itaru Kamohara, Eric Hendrickx, Lawrence S. Melvin, Victor Blanco, Vincent Wiaux, Ivan Ciofi, R. H. Kim, Yves Saad, Vicky Philipsen |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Interconnection Materials science business.industry Extreme ultraviolet lithography 01 natural sciences 010309 optics Process variation Optics Electrical resistance and conductance Optical proximity correction 0103 physical sciences Wafer Node (circuits) business Critical dimension |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | In 5nm node, even minor process variation in extreme ultraviolet lithography (EUVL) can bring significant impact to the device performance. Except for the overlay and critical dimension uniformity (CDU), EUV specific effects, such as shadowing, three-dimensional mask effect (M3D), and stochastic effects, must also be understood in processing, modeling, and optical proximity correction (OPC). We simulate those variabilities using a calibrated model and compare it to what is observed on the wafer. The interconnect path of Metal1-Via1-Metal2 is studied by using a silicon-calibrated resistivity model to analyze the related overlap area and the electrical resistance. The approach allows us to quantify the impact of EUVL process by investigating the individual contribution of each patterning process variations. |
| Databáze: | OpenAIRE |
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