Study of Cuprous Oxide formed at 410°C at Pressures of Air between 0.5 and 75 mm of Hg

Autor:	K. R. Dixit, V. V. Agashe
Rok vydání:	1956
Předmět:	chemistry.chemical_compound chemistry Inorganic chemistry Oxide General Physics and Astronomy Physical and Theoretical Chemistry Mathematical Physics
Zdroj:	Zeitschrift für Naturforschung A. 11:41-45
ISSN:	1865-7109 0932-0784
DOI:	10.1515/zna-1956-0108
Popis:	Oxides of copper formed at a temperature of 410° C and at pressures between 0.5 and 75 mm of Hg have been studied. At these low pressures we get only one oxide namely Cu2O. The increase of pressure and the time of oxidation appear mainly to produce a change in the orientation of the Cu2O crystallites. The films when sufficiently thick peal off, but even at this stage of thickness (1 μ to 3 μ) they do not show any electrical resistance or rectification.
Databáze:	OpenAIRE
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