Heavy-ion induced current in MOS structure
| Autor: | Toshihiko Shibata, Tomihiro Kamiya, Toshio Hirao, Shinobu Onoda, Kazunori Ohnishi, Yoshihiro Takahashi |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Argon Computer Networks and Communications business.industry Displacement current Oxide General Physics and Astronomy chemistry.chemical_element Electron chemistry.chemical_compound Semiconductor chemistry Optoelectronics Irradiation Electrical and Electronic Engineering Atomic physics business Diode Voltage |
| Zdroj: | Electronics and Communications in Japan (Part II: Electronics). 90:32-40 |
| ISSN: | 1520-6432 8756-663X |
| Popis: | We studied the mechanism for generation of transient current in MOS structures during heavy-ion irradiation. In heavy-ion (argon, oxygen) irradiation tests on Al gate MOS diodes, we observed irradiation-induced transient current only in bias conditions where the semiconductor surface is in a depletion condition, and found that the peak value was dependent on the applied voltage during irradiation, the oxide film thickness, and the linear energy transfer of heavy ion. In addition, in a comparison of calculation results and test results using a device simulation, we found that a model of the oxide film as a perfectly insulating film can be used to quantitatively explain the test results, and confirmed that the displacement current component of the heavy-ion induced current in the MOS structure transmitted via the oxide film is dominant. © 2006 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(1): 32–40, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20274 |
| Databáze: | OpenAIRE |
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