Growth of diamond films and characterization by Raman, scanning electron microscopy, and x-ray photoelectron spectroscopy

Autor: D.R. Chopra, K. K. Mishra, T. D. Black, C. A. Dark, Suresh C. Sharma, M. Green, R. C. Hyer, A. R. Chourasia
Rok vydání: 1990
Předmět:
Zdroj: Journal of Materials Research. 5:2424-2432
ISSN: 2044-5326
0884-2914
DOI: 10.1557/jmr.1990.2424
Popis: We have deposited diamond films on Si〈111〉 using hot filament assisted chemical vapor deposition at low pressures ∼25 Torr. Diamond films deposited at different relative concentrations of methane (ranging from 0.25% to 2.0%) in methane-hydrogen mixtures have been characterized by Raman spectroscopy, scanning electron microscopy, and x-ray photoelectron spectroscopy. With varying methane concentration, Raman spectra show features characteristic of crystalline diamond, diamond-like carbon, and polycrystalline graphite. Scanning electron micrographs show densely packed diamond crystallites. SEM measurements made on diamond films grown as a function of time show that the median grain size of the diamond crystallites increases linearly with time during the initial phase of the growth. X-ray photoelectron spectroscopy reveals differences between the diamond sp3 covalent bonding and sp2 graphitic bonding as well as the extent of s-p hybridization as a function of methane concentration. The plasmon loss shoulder, characteristic of graphite, is absent from the spectrum of 0.25% methane concentration film. But it appears in the XPS spectra of films grown at higher concentrations.
Databáze: OpenAIRE
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