Influence of the doping type and level on the morphology of porous Si formed by galvanic etching
| Autor: | Yu. I. Shilyaeva, Yu. P. Shaman, O. Pyatilova, A. A. Pavlov, Sergey Gavrilov, A. A. Dudin |
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| Rok vydání: | 2017 |
| Předmět: |
inorganic chemicals
Dopant Chemistry Scanning electron microscope Doping technology industry and agriculture Nanotechnology 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Chemical engineering Electrical resistivity and conductivity Etching (microfabrication) Specific surface area Wafer 0210 nano-technology |
| Zdroj: | Semiconductors. 51:173-177 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The formation of porous silicon (por-Si) layers by the galvanic etching of single-crystal Si samples (doped with boron or phosphorus) in an HF/C2H5OH/H2O2 solution is investigated. The por-Si layers are analyzed by the capillary condensation of nitrogen and scanning electron microscopy (SEM). The dependences of the morphological characteristics of por-Si (pore diameter, specific surface area, pore volume, and thickness of the pore walls), which determine the por-Si combustion kinetics, on the dopant type and initial wafer resistivity are established. |
| Databáze: | OpenAIRE |
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