A selectively pumped p-well memory array technology for high density static RAMs

Autor:	Louis C. Parrillo, J.E. Leiss, V.W. Soorholtz, R.W. Mauntel, Norm Herr, R.I. Kung, M.D. Bader, S.J. Cosentino, S.K. Madan, K.L. Wang, Horacio Mendez
Rok vydání:	1986
Předmět:	Materials science business.industry Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Memory array Capacitance law.invention Read-write memory Soft error CMOS law Hardware_INTEGRATEDCIRCUITS Static random-access memory Resistor business Leakage (electronics)
Zdroj:	1986 International Electron Devices Meeting.
DOI:	10.1109/iedm.1986.191260
Popis:	A selectively pumped p-well SRAM cell technology is discussed. This technology allows the optimization of circuit speed while reducing the array leakage. In addition, a pumped p-well cell technology improves cell stability, reduces bit line capacitance, and lowers soft error rate. This technology is demonstrated in a 21ns 256K CMOS SRAM fabricated with an advanced 1.2-um double-level poly, double-level metal CMOS technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ba0769f6ae2b74d7edfc7eab8ee83d86 https://doi.org/10.1109/iedm.1986.191260 Zobrazit plný text záznamu