Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics

Autor:	J. Hage, Philipp Wagner, G. D. Watkins, J.M. Trombetta
Rok vydání:	1997
Předmět:	Preferential alignment Crystallography Silicon chemistry Chemical physics Lattice (order) Thermal Kinetics General Physics and Astronomy chemistry.chemical_element Activation energy Piezoelectricity Oxygen
Zdroj:	Journal of Applied Physics. 81:1109-1115
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.363854
Popis:	Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ∼450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the strain fields that each introduces into the lattice. Analysis reveals that each of the donor cores produces large compressional strain along its C2v [001]′ axis, the magnitude of which decreases monotonically with increase in the TDD species series, suggesting strain relief as the mechanism for nearby oxygen accumulation. The rate and activation energy for the reorientation suggests that the process is limited by the diffusion motion of the nearby interstitial oxygen atoms, with ∼5 jumps being required for TDD3, the third in the series, and progressively more for the subsequent ones.
Databáze:	OpenAIRE
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