RF SOI Switch FET Design and Modeling Tradeoffs for GSM Applications

Autor:	Michael Claus Olsen, Amit Ranjan Trivedi, Shyam Parthasarathy, Ali Tombak, Yogesh Singh Chauhan, Michael Carroll, Robert A. Groves, D. Kerr, P. Mason, Saurabh Sirohi
Rok vydání:	2010
Předmět:	Engineering RF switch CMOS business.industry GSM Process (computing) Electronic engineering Electrical engineering Wireless Silicon on insulator Ohm business Integrated circuit layout
Zdroj:	VLSI Design
DOI:	10.1109/vlsi.design.2010.64
Popis:	A single-pole double-throw novel switch device in0.18¹m SOI complementary metal-oxide semiconductor(CMOS) process is developed for 0.9 Ghz wireless GSMsystems. The layout of the device is optimized keeping inmind the parameters of interest for the RF switch. A subcircuitmodel, with the standard surface potential (PSP) modelas the intrinsic FET model along with the parasitic elementsis built to predict the Ron and Coff of the switch. Themeasured data agrees well with the model. The eight FETstacked switch achieved an Ron of 2.5 ohms and an Coff of180 fF.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9fcd8b148cebc77a0e5df3fb589307f https://doi.org/10.1109/vlsi.design.2010.64 Zobrazit plný text záznamu