Interfacial Characterization and Electrical Properties of Co/GaSb Contacts
| Autor: | Tung Huan Chou, Kun Lin Lin, Yu Chieh Cheng |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Mechanics of Materials Mechanical Engineering 0103 physical sciences General Materials Science Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 0210 nano-technology Condensed Matter Physics 01 natural sciences Characterization (materials science) |
| Zdroj: | Materials Science Forum. 928:215-220 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.928.215 |
| Popis: | The microstructures of Co–GaSb junctions in samples annealed at 300, 400, 500, and 600°C in a N2atmosphere were characterized using transmission electron microscopy (TEM) in combination with energy-dispersive spectrometry (EDS), nanobeam electron diffraction (NBD), and the selected area diffraction patterns (SADPs). The isolated CoSb3(Ga) phase started to form at the interface of Co/GaSb in the temperature of 400°C and then the CoSb3(Ga) phase changed to a continues layer at the interface when the annealing temperature was increased to 500°C. Upon increasing the temperature to 600°C, a large amount of Ga from GaSb diffused out toward Co to form a CoGa layer. The specific contact resistivity of Co/GaSb contact was evaluated by circular transmission line model (CTLM) and indicated that the lowest value was 5.410-4Ω-cm at annealing temperature of 500°C and possessed high current density of 41.7 A/cm2at 1V. These results indicate that the annealing temperature of the Co/GaSb structure could be maintained below 500°C for the successful formation of low-resistance metal Co/GaSb contacts in GaSb-based p-type metal-oxide-semiconductor field-effect transistors. |
| Databáze: | OpenAIRE |
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