Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Autor:	A. R. Ullah, H. J. Joyce, A. M. Burke, J. Wong-Leung, H. H. Tan, C. Jagadish, A. P. Micolich
Rok vydání:	2013
Předmět:	Physics business.industry Transistor Nanowire Condensed Matter Physics law.invention law Phase (matter) Optoelectronics General Materials Science Nanowire transistors business Electronic properties Wurtzite crystal structure
Zdroj:	physica status solidi (RRL) - Rapid Research Letters. 7:911-914
ISSN:	1862-6254
DOI:	10.1002/pssr.201308014
Popis:	We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::b9ef18eb808a0477471c74ebeb5a5712 https://doi.org/10.1002/pssr.201308014 Zobrazit plný text záznamu Plný text